MRF8P9040GNR1【PDF 12/23 页】IC MOSFET RF N-CHAN TO-270

您好，
买卖IC网欢迎您。
请登录
免费注册

8页 9页 10页 11页 [12页]13页 14页 15页 16页

2

RF Device Data

Freescale Semiconductor

MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +70

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

--65 to +150

°C

Case Operating Temperature

TC

150

°C

Operating Junction Temperature

(1,2)

TJ

225

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(2,3)

Unit

Thermal Resistance, Junction to Case

(4)

Case Temperature 77°C, 4.0 W CW, 28 Vdc, IDQ

= 320 mA, 960 MHz

Case Temperature 81°C, 40 W CW, 28 Vdc, IDQ

= 320 mA, 960 MHz

RθJC

1.5

1.3

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

1B (Minimum)

Machine Model (per EIA/JESD22--A115)

A (Minimum)

Charge Device Model (per JESD22--C101)

III (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

3

260

°C

Table 5. Electrical Characteristics

(TA

=25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

(4)

Zero Gate Voltage Drain Leakage Current

(VDS

=70Vdc,VGS

=0Vdc)

IDSS

?

?

10

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS

=28Vdc,VGS

=0Vdc)

IDSS

?

?

1

μAdc

Gate--Source Leakage Current

(VGS

=5Vdc,VDS

=0Vdc)

IGSS

?

?

1

μAdc

On Characteristics

(4)

Gate Threshold Voltage

(VDS

=10Vdc,ID

= 170

μAdc)

VGS(th)

1.5

2.3

3.0

Vdc

Gate Quiescent Voltage

(VDD

=28Vdc,ID

= 320 mAdc, Measured in Functional Test)

VGS(Q)

2.3

3.1

3.8

Vdc

Drain--Source On--Voltage

(VGS

=10Vdc,ID

=0.55Adc)

VDS(on)

0.1

0.17

0.3

Vdc

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

4. Measurement made with device in single--ended configuration. (See Figure 3, Possible Circuit Topologies)

(continued)

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

*

*

*

相关PDF资料

MRF8P9300HSR6 FET RF N-CH 960MHZ 70V NI-1230HS

MRF8S18120HR5 MOSFET RF N-CH 120W NI-780

MRF8S18260HSR6 MOSFET RF N-CH 260W NI1230S-8

MRF8S19140HSR3 FET RF N-CH 1960MHZ 28V NI780HS

MRF8S19260HSR6 FET RF N-CH 1.9GHZ 30V NI1230S-8

MRF8S21120HSR3 FET RF N-CH 2.1GHZ 28V NI780HS

MRF8S21140HSR3 FET RF N-CH 2GHZ 28V NI780S

MRF8S21200HSR6 MOSFET RF N-CH 48W NI-1230HS

相关代理商/技术参数

MRF8P9040NBR1 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 40W RoHS:否制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray

MRF8P9040NR1 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 40W RoHS:否制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray

MRF8P9210NR3 功能描述:射频MOSFET电源晶体管 HV8 900MHz 63W RoHS:否制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray

MRF8P9300HR5 功能描述:射频MOSFET电源晶体管 HV8-900 100W 28V NI1230H RoHS:否制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray

MRF8P9300HR6 功能描述:射频MOSFET电源晶体管 HV8-900 100W 28V NI1230H RoHS:否制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray

MRF8P9300HR6_10 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

MRF8P9300HSR5 功能描述:射频MOSFET电源晶体管 HV8-900 100W 28V NI1230HS RoHS:否制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray

MRF8P9300HSR6 功能描述:射频MOSFET电源晶体管 HV8-900 100W 28V NI1230HS RoHS:否制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray